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MITB15WB1200TMH
Brake T7
Ratings
Symbol
V CES
V GES
V GEM
I C25
I C80
P tot
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
Conditions
continuous
transient
T VJ = 150°C
T C = 25°C
T C = 80°C
T C = 25°C
min.
typ.
max.
1200
±20
±30
29
20
100
Unit
V
V
V
A
A
W
V CE(sat)
collector emitter saturation voltage
I C = 15 A; V GE = 15 V
T VJ = 25°C
T VJ = 125°C
1.7
2.0
2.2
V
V
V GE(th)
I CES
gate emitter threshold voltage
collector emitter leakage current
I C = 0.5 mA; V GE = V CE
V CE = V CES ; V GE = 0 V
T VJ = 25°C
T VJ = 25°C
T VJ = 125°C
5
5.5
0.8
6.5
0.6
V
mA
mA
I GES
C ies
Q G(on)
gate emitter leakage current
input capacitance
total gate charge
V GE = ±20 V
V CE = 25 V; V GE = 0 V; f = 1 MHz
V CE = 600 V; V GE = 15 V; I C = 15 A
1100
92
150
nA
pF
nC
t d(on)
t r
t d(off)
t f
E on
E off
t d(on)
t r
t d(off)
t f
E on
E off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V CE = 600 V; I C = 15 A
V GE = ±15 V; R G = 75 W
inductive load
V CE = 600 V; I C = 15 A
V GE = ±15 V; R G = 75 W
T VJ = 25°C
T VJ = 125°C
55
30
320
200
1.0
1.3
60
35
360
340
1.6
1.7
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
RBSOA
I SC
(SCSOA)
reverse bias safe operating area
short circuit safe operating area
V GE = ±15 V; R G = 75 W ; I C = 30 A; T VJ = 125°C
V CE = 720 V; V GE = ±15 V; T VJ = 125°C
R G = 75 W ; t p = 10 μs; non-repetitive
V CEK < V CES -L S · d I /dt
68
V
A
R thJC
R thCH
thermal resistance junction to case
thermal resistance case to heatsink
(per IGBT)
0.4
1.2
K/W
K/W
Brake Chopper D7
Ratings
Symbol
V RRM
I F25
I F80
V F
I R
Q rr
I RM
t rr
E rec
R thJC
R thCH
Definitions
max. repetitive reverse voltage
forward current
forward voltage
reverse current
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
Conditions
I F = 15 A; V GE = 0 V
V R = V RRM
V R = 600 V
di F /dt = tbd A/μs
I F = 10 A; V GE = 0 V
(per diode)
T VJ = 150°C
T C = 25°C
T C = 80°C
T VJ = 25°C
T VJ = 125°C
T VJ = 25°C
T VJ = 125°C
T VJ = 125°C
min.
typ.
3.0
2.4
0.2
tbd
tbd
tbd
tbd
0.85
max.
1200
15
10
3.3
0.1
2.5
Unit
V
A
A
V
V
mA
mA
μC
A
ns
μJ
K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
? 2010 IXYS All rights reserved
T C = 25°C unless otherwise stated
20100906a
3-8
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